High Current Probe (HCP) with Tungsten Probe Tips

Product Overview

Designed specifically for testing power devices on wafer, the HCP probe reduces probe and device destruction at high currents by minimizing contact resistance at the wafer-to-probe interface to prevent device heating at the tip. The innovative multi-finger design distributes the current over multiple contact points at the tip and is joined by a single heatsink which pulls heat from the probe tip.

Key Features

Enables wafer probing up to 100 A pulsed and 10A DC
Innovative multi-fingertip design provides even distribution of current
Supports up to 500 V
Replaceable Tungsten probe tips
Temperature range of -60°C to 300°C
Minimal contact resistance at the pad-tip junction to reduce heating during measurements, with fewer probe marks
Prevents against thermal runaway
Measure devices on wafer at higher currents than ever before
Small scrub minimizes damage to aluminum pad
Small footprint – tip fits on a 1 mm pad

Videos

TESLA200 - 200mm High Power Probe System

The TESLA200 Advanced On-Wafer Power Semiconductor Probe System is an integrated high-power test solution that enables collection of accurate high voltage and high current measurement data, with complete operator safety.

Downloads

High-Power Probes Data Sheet

Probe Selection Guide